3.0 Diode Models
================

3.1 Model description and limitation
------------------------------------

Temperature characteristics are measured form -40 to 125 C for IV and CV it is taken @ 25C and 125C.The diodes are modeled with Level 3 diode model. The forward bias behavior and the reverse breakdown behavior are modeled for different temperatures.

Schottky Diode Breakdown Temperature dependence is not modelled.

.. csv-table::
   :file: tables_clear/23_Diode_Models.csv

3.2 Model vs EP Nominal Target
------------------------------

.. csv-table::
   :file: tables_clear/24_EP_Nominal.csv

**Bias Conditions:**

- Von: @Forward current=1uA/um^2

- Reverse Breakdown: @Reverse current =10uA/um^2

- Reverse Leakage current: @Reverse voltage=6.6V

3.3 How to Use the Models
-------------------------

3.3.1 For NGSPICE Users
.......................

**To be added**

3.3.2 For XYCE Users
....................

**To be added**



