FAB3E Spice Model For 0.18um 10v High Voltage MCU Process

FAB3E Spice Models For 0.18um

10V High Voltage MCU Process

Model Reference Guide

• 1.0 Introduction
  • 1.1 Scope
  • 1.2 Model Overview
    • 1.4 Device List
      • 1.4.1 MOSFETs
    • 1.5 Instance Parameters List
      • 1.5.1 MOSFET Instance parameters
• 2.0 MOSFET Models
  • 2.1 MOSFET Model Extraction
  • 2.2 Model Features and Limitations
  • 2.3 Notes
    • 2.3.1 Recommened Instance Parameter Range
  • 2.4 MOSFET Fixed Corner Models
    • 2.4.1 Fixed Corner Methodology
    • 2.4.2 Corner Model Definitions
  • 2.5 Model vs. EP Nominal Target
    • 2.5.1 10V LDNMOS & LDPMOS
  • 2.6 How to Use the Models
    • 2.6.1 For NGSPICE Users
    • 2.6.2 For XYCE Users
• 3.0 Model to Hardware Correlation
  • 3.1 MOSFETS
    • 3.1.1 10V Asym LDNMOS
• 4.0 Statistical Models
  • 4.1 Statistical Models Syntax & Usage
    • 4.1.1 General Syntax
    • 4.1.2 Parameter switches
    • 4.1.3 MC skew limit parameter
  • 4.2 Global Statistical Modeling Results
    • 4.2.1 Isolated 10V LDMOS Process MC