2.0 MOSFET Models
ΒΆ
2.1 MOSFET Model Extraction
2.2 Model Features and Limitations
2.2.1 LV NMOS and LV PMOS (3.3V)
2.3 1/f Noise Measurement conditions
2.4 MOSFET Fixed Corner Models
2.4.1 Fixed Corner Methodology
2.4.2 Corner Model Definitions
2.5 Model vs. EP Nominal Target
2.5.1 nfet_03v3 and pfet_03v3 (3.3V)
2.5.2 NMOS 3p3 SAB PMOS 3p3 SAB
2.5.3 nfet_06v0 and pfet_06v0 (6V)
2.5.4 nfet_06v0 and pfet_06v0 (5V)
2.6 How to Use the Models
2.6.1 For NGSPICE Users
2.6.2 For XYCE Users
GlobalFoundries GF180MCU PDK
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FAB3E Spice Model For 0.18um 3.3v/6v High Voltage MCU Process
1.0 Introduction
2.0 MOSFET Models
2.1 MOSFET Model Extraction
2.2 Model Features and Limitations
2.3 1/f Noise Measurement conditions
2.4 MOSFET Fixed Corner Models
2.5 Model vs. EP Nominal Target
2.6 How to Use the Models
3.0 Diode Models
4.0 Resistor Models
5.0 BJT Models
6.0 MOSCAP Capacitor Models
7.0 MIM Capacitor Models
8.0 Model to Hardware Correlation
9.0 Statistical Model Reference guide
FAB3E Spice Model For 0.18um 10v High Voltage MCU Process
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FAB3E Spice Model For 0.18um 3.3v/6v High Voltage MCU Process
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