2.0 MOSFET ModelsΒΆ

  • 2.1 MOSFET Model Extraction
  • 2.2 Model Features and Limitations
    • 2.2.1 LV NMOS and LV PMOS (3.3V)
  • 2.3 1/f Noise Measurement conditions
  • 2.4 MOSFET Fixed Corner Models
    • 2.4.1 Fixed Corner Methodology
    • 2.4.2 Corner Model Definitions
  • 2.5 Model vs. EP Nominal Target
    • 2.5.1 nfet_03v3 and pfet_03v3 (3.3V)
    • 2.5.2 NMOS 3p3 SAB PMOS 3p3 SAB
    • 2.5.3 nfet_06v0 and pfet_06v0 (6V)
    • 2.5.4 nfet_06v0 and pfet_06v0 (5V)
  • 2.6 How to Use the Models
    • 2.6.1 For NGSPICE Users
    • 2.6.2 For XYCE Users

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      • FAB3E Spice Model For 0.18um 3.3v/6v High Voltage MCU Process
        • 1.0 Introduction
        • 2.0 MOSFET Models
          • 2.1 MOSFET Model Extraction
          • 2.2 Model Features and Limitations
          • 2.3 1/f Noise Measurement conditions
          • 2.4 MOSFET Fixed Corner Models
          • 2.5 Model vs. EP Nominal Target
          • 2.6 How to Use the Models
        • 3.0 Diode Models
        • 4.0 Resistor Models
        • 5.0 BJT Models
        • 6.0 MOSCAP Capacitor Models
        • 7.0 MIM Capacitor Models
        • 8.0 Model to Hardware Correlation
        • 9.0 Statistical Model Reference guide
      • FAB3E Spice Model For 0.18um 10v High Voltage MCU Process
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        • FAB3E Spice Model For 0.18um 3.3v/6v High Voltage MCU Process
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