5.0 General Specification (Resistor, Capacitor, Oxide, Junction and Parasitic NPN/PNP)
ΒΆ
5.1 Sheet Resistance
5.2 Contact Resistance
5.3 Gate oxide capacitance
5.4 Oxide Breakdown Voltage
5.5 Junction Breakdown Voltage
5.6 Parasitic Capacitance
5.7 Temperature Coefficient
5.8 Vertical BJT Transistors
GlobalFoundries GF180MCU PDK
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Specifications For 180MCU
1.0 Low Voltage Devices (3.3V)
2.0 Medium Voltage Devices (6V)
3.0 Medium Voltage Devices (5V)
4.0 Native Vt transistor (6V)
5.0 General Specification (Resistor, Capacitor, Oxide, Junction and Parasitic NPN/PNP)
5.1 Sheet Resistance
5.2 Contact Resistance
5.3 Gate oxide capacitance
5.4 Oxide Breakdown Voltage
5.5 Junction Breakdown Voltage
5.6 Parasitic Capacitance
5.7 Temperature Coefficient
5.8 Vertical BJT Transistors
6.0 Optional Passive Elements
7.0 SAB Devices
8.0 High Voltage LDMOS Transistor (10.0V)
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Specifications For 180MCU
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4.0 Native Vt transistor (6V)
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5.1 Sheet Resistance
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