14.5.1 ESD Performance from 3.3V NMOS transistor
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ESD Performance from 3.3V NMOS transistor is summarized in following table. The TLP data for 3.3V grounded gate NMOS without ESD implant is showed in below.

.. csv-table::
    :file: tables_clear/60_ESD_Performance_174.csv
    :widths: 400, 300
    :align: center

.. image:: images/ESD_Characterization1.png
    :width: 600
    :align: center
    :alt:  3.3V GGNMOS TLP IV Characteristics

