2.0 MOSFET ModelsΒΆ

  • 2.1 MOSFET Model Extraction
  • 2.2 Model Features and Limitations
  • 2.3 Notes
    • 2.3.1 Recommened Instance Parameter Range
  • 2.4 MOSFET Fixed Corner Models
    • 2.4.1 Fixed Corner Methodology
    • 2.4.2 Corner Model Definitions
  • 2.5 Model vs. EP Nominal Target
    • 2.5.1 10V LDNMOS & LDPMOS
  • 2.6 How to Use the Models
    • 2.6.1 For NGSPICE Users
    • 2.6.2 For XYCE Users

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GlobalFoundries GF180MCU PDK

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      • FAB3E Spice Model For 0.18um 3.3v/6v High Voltage MCU Process
      • FAB3E Spice Model For 0.18um 10v High Voltage MCU Process
        • 1.0 Introduction
        • 2.0 MOSFET Models
          • 2.1 MOSFET Model Extraction
          • 2.2 Model Features and Limitations
          • 2.3 Notes
          • 2.4 MOSFET Fixed Corner Models
          • 2.5 Model vs. EP Nominal Target
          • 2.6 How to Use the Models
        • 3.0 Model to Hardware Correlation
        • 4.0 Statistical Models
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Related Topics

  • Documentation overview
    • Custom Design
      • Model Parameters
        • FAB3E Spice Model For 0.18um 10v High Voltage MCU Process
          • Previous: 1.2 Model Overview
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