Specifications For 180MCU

GlobalFoundries Singapore PTE LTD

Electrical Parameters Specification

For 0.18um 3.3v/6v High Volage Process

• 1.0 Low Voltage Devices (3.3V)
• 2.0 Medium Voltage Devices (6V)
• 3.0 Medium Voltage Devices (5V)
• 4.0 Native Vt transistor (6V)
• 5.0 General Specification (Resistor, Capacitor, Oxide, Junction and Parasitic NPN/PNP)
  • 5.1 Sheet Resistance
  • 5.2 Contact Resistance
  • 5.3 Gate oxide capacitance
  • 5.4 Oxide Breakdown Voltage
  • 5.5 Junction Breakdown Voltage
  • 5.6 Parasitic Capacitance
  • 5.7 Temperature Coefficient
  • 5.8 Vertical BJT Transistors
• 6.0 Optional Passive Elements
  • 6.1A 1000 ohm/sq High Poly Resistor
  • 6.1B 2000 ohm/sq High Poly Resistor
  • 6.1C 3000 ohm/sq High Poly Resistor
  • 6.2 MIM Capacitor
• 7.0 SAB Devices
  • 7.1A 3.3V NMOS SAB
  • 7.1B 3.3V PMOS SAB
  • 7.2A 5V NMOS SAB
  • 7.2B 5V PMOS SAB
  • 7.3A 6V NMOS SAB
  • 7.3B 6V PMOS SAB
• 8.0 High Voltage LDMOS Transistor (10.0V)
  • 8.1 High Voltage LDNMOS Transistor (10.0V)
  • 8.2 High Voltage LDPMOS Transistor (10.0V)