5.0 General Specification (Resistor, Capacitor, Oxide, Junction and Parasitic NPN/PNP)ΒΆ

  • 5.1 Sheet Resistance
  • 5.2 Contact Resistance
  • 5.3 Gate oxide capacitance
  • 5.4 Oxide Breakdown Voltage
  • 5.5 Junction Breakdown Voltage
  • 5.6 Parasitic Capacitance
  • 5.7 Temperature Coefficient
  • 5.8 Vertical BJT Transistors

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GlobalFoundries GF180MCU PDK

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      • Specifications For 180MCU
        • 1.0 Low Voltage Devices (3.3V)
        • 2.0 Medium Voltage Devices (6V)
        • 3.0 Medium Voltage Devices (5V)
        • 4.0 Native Vt transistor (6V)
        • 5.0 General Specification (Resistor, Capacitor, Oxide, Junction and Parasitic NPN/PNP)
          • 5.1 Sheet Resistance
          • 5.2 Contact Resistance
          • 5.3 Gate oxide capacitance
          • 5.4 Oxide Breakdown Voltage
          • 5.5 Junction Breakdown Voltage
          • 5.6 Parasitic Capacitance
          • 5.7 Temperature Coefficient
          • 5.8 Vertical BJT Transistors
        • 6.0 Optional Passive Elements
        • 7.0 SAB Devices
        • 8.0 High Voltage LDMOS Transistor (10.0V)
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        • Specifications For 180MCU
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